Hall Effect and Mobility in n-Type GaAs
- 1 January 1968
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 29 (1) , K35-K37
- https://doi.org/10.1002/pssb.19680290155
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Current Instabilities in n-GaAsJapanese Journal of Applied Physics, 1966
- AN INTERMEDIATE DONOR LEVEL IN N-TYPE GALLIUM ARSENIDECanadian Journal of Physics, 1966
- Effect of Stress on the Electrical Properties of-Type Gallium ArsenidePhysical Review B, 1965
- Anomalous Mobility Effects in Some Semiconductors and InsulatorsJournal of Applied Physics, 1962
- Band Structure and Electron Transport of GaAsPhysical Review B, 1960
- Effect of Random Inhomogeneities on Electrical and Galvanomagnetic MeasurementsJournal of Applied Physics, 1960
- Properties of Silicon and GermaniumProceedings of the IRE, 1952