Real time in situ observation of (001)GaAs in OMCVD by reflectance difference spectroscopy
- 1 January 1992
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 60-61, 534-543
- https://doi.org/10.1016/0169-4332(92)90472-a
Abstract
No abstract availableKeywords
This publication has 39 references indexed in Scilit:
- Surface reconstructions of GaAs(100) observed by scanning tunneling microscopyPhysical Review B, 1990
- Fractional Stoichiometry of the GaAs(001)Surface: AnIn-SituX-Ray Scattering StudyPhysical Review Letters, 1989
- Structure of GaAs(001)Determined by Scanning Tunneling MicroscopyPhysical Review Letters, 1988
- Molecular-beam epitaxy growth mechanisms on GaAs(100) surfacesJournal of Vacuum Science & Technology B, 1987
- Atomic structure of GaAs(100)-(2×1) and (2×4) reconstructed surfacesJournal of Vacuum Science & Technology A, 1987
- : A chemisorbed structurePhysical Review B, 1983
- Angle-resolved photoemission studies of GaAs(100) surfaces grown by molecular-beam epitaxyPhysical Review B, 1983
- Disorder on GaAs(001) surfaces prepared by molecular beam epitaxyJournal of Vacuum Science & Technology A, 1983
- Composition and structure of differently prepared GaAs(100) surfaces studied by LEED and AESSurface Science, 1978
- Bonding direction and surface-structure orientation on GaAs (001)Journal of Applied Physics, 1976