Fractional Stoichiometry of the GaAs(001)Surface: AnIn-SituX-Ray Scattering Study
- 30 January 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 62 (5) , 563-566
- https://doi.org/10.1103/physrevlett.62.563
Abstract
Synchrotron x-ray diffraction analysis of GaAs(001) epilayers grown in situ by molecular-beam epitaxy shows clear evidence of As-As dimers on top of the outermost As layer. These dimers are ordered in a variable way between two structures which both show a symmetry but have different As content. Both structures have twofold symmetry although the unit cell is square.
Keywords
This publication has 17 references indexed in Scilit:
- Structure of GaAs(001)Determined by Scanning Tunneling MicroscopyPhysical Review Letters, 1988
- Surface structure of As-stabilized GaAs(001): 2×4,c(2×8), and domain structuresPhysical Review B, 1988
- X-ray diffraction evidence of adatoms in the Si(111)7×7 reconstructed surfacePhysical Review B, 1986
- The GaAs (001)−c(4×4) and (2×4) reconstructions: A comparative photoemission studySolid State Communications, 1984
- : A chemisorbed structurePhysical Review B, 1983
- Angle-resolved photoemission studies of GaAs(100) surfaces grown by molecular-beam epitaxyPhysical Review B, 1983
- Stoichiometry effects on surface properties of GaAs{100} grown in situ by MBESurface Science, 1980
- Structure and stoichiometry of {100} GaAs surfaces during molecular beam epitaxyJournal of Crystal Growth, 1978
- Composition and structure of differently prepared GaAs(100) surfaces studied by LEED and AESSurface Science, 1978
- GaAs Epitaxy by a Molecular Beam Method: Observations of Surface Structure on the (001) FaceJournal of Applied Physics, 1971