A Study of Indium Nitride Films Grown Under Conditions Resulting in Apparent Band-gaps from 0.7 eV to 2.3 eV

This publication has 15 references indexed in Scilit:

• Small band gap bowing in In1−xGaxN alloys
  Applied Physics Letters, 2002
• Unusual properties of the fundamental band gap of InN
  Applied Physics Letters, 2002
• Unique capabilities of heavy ion elastic recoil detection with gas ionization detectors
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2002
• Improvement on epitaxial grown of InN by migration enhanced epitaxy
  Applied Physics Letters, 2000
• Hexagonal InN/sapphire heterostructures: interplay of interface and layer properties
  Applied Surface Science, 2000
• Elemental Composition of Reactively Sputtered Indium Nitride Thin Films
  Japanese Journal of Applied Physics, 1996
• Use of secondary molecular ions in Cs‐SIMS elemental analysis
  Surface and Interface Analysis, 1989
• Properties of sputtered nitride semiconductors
  Thin Solid Films, 1988
• Infrared absorption in indium nitride
  Journal of Applied Physics, 1986
• Electron mobility in indium nitride
  Electronics Letters, 1984