Use of secondary molecular ions in Cs‐SIMS elemental analysis
- 1 September 1989
- journal article
- research article
- Published by Wiley in Surface and Interface Analysis
- Vol. 14 (9) , 552-554
- https://doi.org/10.1002/sia.740140910
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- A new secondary ion mass spectrometry technique for III-V semiconductor compounds using the molecular ions CsM+Journal of Applied Physics, 1988
- Quantitative analysis and depth profiling of rare gases in solids by secondary-ion mass spectrometry: Detection of (CsR)+ molecular ions (R=rare gas)Journal of Vacuum Science & Technology A, 1988
- Evaluation of a cesium positive ion source for secondary ion mass spectrometryAnalytical Chemistry, 1977
- High-sensitivity depth profiling of arsenic and phosphorus in silicon by means of SIMSApplied Physics Letters, 1976