High-sensitivity depth profiling of arsenic and phosphorus in silicon by means of SIMS
- 1 November 1976
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 29 (9) , 552-554
- https://doi.org/10.1063/1.89181
Abstract
Secondary ion mass spectrometry has been used for depth profiling of arsenic and phosphorus in silicon. High‐sensitivity analysis down to concentrations of a few 1017 atoms/cm2 could be achieved by energy discrimination against mass interfering molecular secondary ions.Keywords
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