Multistep formation and lateral variation in the In composition in InGaAs layers grown by metalorganic vapor phase epitaxy on (001) vicinal GaAs substrates
- 2 December 1994
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 145 (1-4) , 133-139
- https://doi.org/10.1016/0022-0248(94)91040-5
Abstract
No abstract availableKeywords
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