Temperature quenching of the copper-induced 1.35 eV emission band in p-GaAs
- 16 September 1974
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 25 (1) , 323-327
- https://doi.org/10.1002/pssa.2210250131
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- The temperature quenching of the 1.28 to 1.30 eV emission band in n-GaAsPhysica Status Solidi (a), 1974
- Investigation of surface recombination on epitaxial GaAs filmsPhysica Status Solidi (a), 1973
- Effect of heat treatment on the 0.93, 1.0, and 1.28 ev luminescence bands in n-GaAsPhysica Status Solidi (a), 1973
- Effect of heat treatment on the 0.93 eV luminescence band in p-GaAsPhysica Status Solidi (a), 1972
- On the mechanism of temperature quenching of the copper-induced 1.35 eV luminescence band in GaAsPhysica Status Solidi (a), 1971
- On the mechanism of high-temperature quenching of the copper-induced luminescence in p-type GaAsSolid State Communications, 1969
- Statistics of Inter-Impurity Recombination of Electrons and Holes in SemiconductorsPhysica Status Solidi (b), 1968