First Room Temperature CW Operation of GaInAsP/InP Surface Emitting Laser
- 1 January 1993
- proceedings article
- Published by Optica Publishing Group
Abstract
We have achieved the room temperature cw lasing operation in GaInAsP/InP vertical cavity surface emitting laser diodes for the first time. By employing a buried heterostructure with a 1.3 μm range circular active region1 and a thermally conductive MgO/Si heat sink mirror, the cw lasing operation was obtained up to 14 °C, as shown in Fig. 1.Keywords
This publication has 4 references indexed in Scilit:
- Threshold reduction of 1.3 μm GaInAsP/InP surface emitting laser by a maskless circular planar buried heterostructure regrowthElectronics Letters, 1993
- 144 °C operation of 1.3 μm InGaAsP vertical cavity lasers on GaAs substratesApplied Physics Letters, 1992
- Room temperature pulsed operation of 1.5 mu m GaInAsP/InP vertical-cavity surface-emitting laserIEEE Photonics Technology Letters, 1992
- Low-threshold, high-temperature pulsed operation of InGaAsP/InP vertical cavity surface emitting lasersIEEE Photonics Technology Letters, 1991