Evidence of deep-level defects in an MQW electroabsorption modulator through current-voltage and electrical noise characterization
- 1 January 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 35 (11) , 1640-1648
- https://doi.org/10.1109/3.798087
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Noise and current characterization of lattice-mismatched LP-MOCVD grown InP/InGaAs/InP photodetector arraysPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- 76-km transmission over standard dispersion fiber at 10 Gbit/s using a high-power integrated laser modulator and a PIN receiver without any optical amplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Integrated multiquantum well distributed feedbacklaser-electroabsorption modulator with a negative chirp for zero bias voltageElectronics Letters, 1997
- Dispersion-penalty-free transmission over 130-km standard fiber using a 1.55-μm, 10-Gb/s integrated EA/DFB laser with low-extinction ratio and negative chirpIEEE Photonics Technology Letters, 1996
- Low drive voltage (1.5 Vp.p.) and high power DFB-LD/modulatorintegrated light sources usingbandgap energy controlled selective MOVPEElectronics Letters, 1996
- High-performance modulator/integrated light sources grown by an in-plane band-gap energy-control techniquePublished by Optica Publishing Group ,1995
- Engineering of barrier band structure for electroabsorptionMQW modulatorsElectronics Letters, 1994
- Simple measurement of fiber dispersion and of chirp parameter of intensity modulated light emitterJournal of Lightwave Technology, 1993
- Dark-current and capacitance analysis of InGaAs/InP photodiodes grown by metalorganic chemical vapor depositionJournal of Applied Physics, 1986
- Experimental studies on 1/f noiseReports on Progress in Physics, 1981