Anisotropic mobility in large grain size solution processed organic semiconductor thin films

Abstract
The hollow pen method for writing thin films of materials from solution is utilized to depositfilms of 6,13-bis(tri-isopropylsilylethynyl) pentacene (TIPS pentacene) onto Si O 2 surfaces with pre-patterned source/drain gold contacts. We demonstrate that large domains are obtained for TIPS pentacene filmsdeposited from 0.5 – 4.0 wt % solutions with toluene. Crystalline grains with (001) orientation are observed to grow with sizes that can exceed 1 mm along the writing direction. A preferred azimuthal orientation is also selected by the process, resulting in anisotropicfield effect transistormobility in the films.