DLTS analysis of carrier generation transients in thin SOI MOSFETs

This publication has 15 references indexed in Scilit:

• Accurate technique for CV Measurements on SOI structures excluding parasitic capacitance effects
  IEEE Electron Device Letters, 1986
• Determination of minority-carrier generation lifetime in beam-recrystallized silicon-on-insulator structure by using a depletion-mode transistor
  Applied Physics Letters, 1985
• Electrical Characterization of Crystallized—Silicon Thin Films
  MRS Proceedings, 1985
• The concept of generation and recombination lifetimes in semiconductors
  IEEE Transactions on Electron Devices, 1982
• A dual-gate deep-depletion technique for generation lifetime measurement
  IEEE Transactions on Electron Devices, 1980
• Hot hole effect on surface-state density and minority-carrier generation rates in Si-MOS diodes measured by DLTS
  IEEE Transactions on Electron Devices, 1980
• Minority-carrier lifetime in dielectrically isolated single-crystal silicon films defined by electrochemical etching
  Solid-State Electronics, 1974
• On the determination of minority carrier lifetime from the transient response of an MOS capacitor
  IEEE Transactions on Electron Devices, 1967
• Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics
  Proceedings of the IRE, 1957
• Electron-Hole Recombination in Germanium
  Physical Review B, 1952