P-N JUNCTIONS AS ARTIFICIAL DIFFUSION BARRIERS FOR NATIVE DEFECTS
- 1 November 1968
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 13 (9) , 292-295
- https://doi.org/10.1063/1.1652618
Abstract
A diffusion anomaly of a native acceptor defect in ZnSexTe1−x p‐n junctions is described. The diffusivities of this defect in n‐ and p‐type crystals at 575°C have been determined. The anomaly can be utilized in a triple‐diffusion technique of preparing p‐n junction diodes with improved electrical properties.Keywords
This publication has 7 references indexed in Scilit:
- Mobility of Holes and Interaction between Acceptor Defects in ZnTeJournal of Applied Physics, 1967
- Mechanism of Charge Transport and Light Emission in ZnSexTe1−x p-n JunctionsJournal of Applied Physics, 1967
- The effect of doubly ionizable vacancy acceptors on the conductivity of donor doped semiconducting compounds with special reference to CdTe and ZnTeJournal of Physics and Chemistry of Solids, 1965
- Diffusion of Electrically and Optically Active Defect Centers in II-VI CompoundsPhysical Review B, 1965
- Self-Compensation-Limited Conductivity in Binary Semiconductors. III. Expected Correlations With Fundamental ParametersPhysical Review B, 1964
- Self-Compensation Limited Conductivity in Binary Semiconductors. I. TheoryPhysical Review B, 1964
- The high temperature conductivity of ZnTe in zinc vaporJournal of Physics and Chemistry of Solids, 1964