Native-oxide defined In0.5(AlxGa1−x)0.5P quantum well heterostructure window lasers (660 nm)
- 5 October 1992
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (14) , 1688-1690
- https://doi.org/10.1063/1.108452
Abstract
Data are presented demonstrating In0.5(AlxGa1−x)0.5P quantum well heterostructure lasers with extended current‐blocking windows (∼75 μm/window) that exhibit significant improvements in output power (∼2×) compared to lasers with no windows. The windows and active stripes are defined by the formation of a thin (∼1000 Å, patterned) native oxide via H2O vapor oxidation (550 °C) of the high‐gap In0.5(AlxGa1−x)0.5P upper confining layer. Devices operating at ∼660 nm with a 40 μm wide emitting aperture (∼500 μm cavity) and ∼75 μm windows (total window length ∼150 μm) exhibit 300 K continuous output powers ≳130 mW/facet (uncoated) and pulsed output powers ≳575 mW/facet (uncoated). Improvements in output power result from decreased heating at the facets and defocusing of the optical wave in the unpumped window regions.Keywords
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