Extending the bandwidth performance of heterojunction bipolar transistor-based distributed amplifiers
- 1 May 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 44 (5) , 739-748
- https://doi.org/10.1109/22.493928
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- InAlAs/InGaAs HBT exponentially graded base doping and graded InGaAlAs emitter-base junctionPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- InP based HBT millimeter-wave technology and circuit performance to 40 GHzPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A novel HBT distributed amplifier design topology based on attenuation compensation techniquesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- 33 GHz monolithic cascode AlInAs/GaInAs heterojunction bipolar transistor feedback amplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A novel heterojunction bipolar transistor VCO using an active tunable inductanceIEEE Microwave and Guided Wave Letters, 1994
- A novel heterojunction bipolar transistor active feedback designIEEE Microwave and Guided Wave Letters, 1994
- Low power consumption InAlAs-InGaAs-InP HBT SPDT PIN diode X-band switchIEEE Microwave and Guided Wave Letters, 1993
- 2-19-GHz low-DC power and high-IP/sub 3/ monolithic HBT matrix amplifierIEEE Microwave and Guided Wave Letters, 1992
- GaAs HBT wideband matrix distributed and Darlington feedback amplifiers to 24 GHzIEEE Transactions on Microwave Theory and Techniques, 1991
- Double balanced mixers using active and passive techniquesIEEE Transactions on Microwave Theory and Techniques, 1988