2-19-GHz low-DC power and high-IP/sub 3/ monolithic HBT matrix amplifier
- 1 January 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Guided Wave Letters
- Vol. 2 (1) , 17-18
- https://doi.org/10.1109/75.109129
Abstract
The design and performance of the first wideband, low-DC power and high-IP/sub 3/ monolithic matrix amplifier using GaAs-AlGaAs heterojunction bipolar transistors (HBTs) is reported. The amplifier uses four 2*10 mu m/sup 2/ quad-emitter HBTs in a 2*2 matrix configuration and has a measured gain of 9.6+or-0.9 dB over the 2-19-GHz frequency band. Measured output IP/sub 3/ and 1-dB compression point are 26 dBm and 13 dBm, respectively, at 18 GHz. The total DC-power dissipation is less than 200 mW. The input and output return losses are better than -9.5 dB within the 2-16-GHz bandwidth.Keywords
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