High speed patterning of a metal silicide using scanned probe lithography
- 6 September 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (10) , 1476-1478
- https://doi.org/10.1063/1.124730
Abstract
We describe a simple high-speed process for patterning metal silicides with an atomic force microscope (AFM). The process uses a thin AFM-generated oxide to block Pt diffusion during the formation of Pt silicide. Because the process requires only ∼1 nm of oxide, high write speeds and fine lateral resolution are achieved. We find that by maintaining ambient moisture at the tip–sample interface we can under optimal tip conditions achieve a minimum exposure time of ∼300 ns for a 30 nm size pixel which corresponds to a maximum write speed of ∼10 cm/s.Keywords
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