Hydrocarbon reaction with HF-cleaned Si(100) and effects on metal-oxide-semiconductor device quality
- 1 July 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (1) , 108-110
- https://doi.org/10.1063/1.105560
Abstract
The surface reactivity of hydrogen-passivated, HF-cleaned Si(100) towards hydrocarbon adsorption is examined by surface analysis; most hydrocarbons adsorb on the surface. Dangling bonds formed during thermal processing react with fragmented organic molecules forming SiC. Metal-oxide-semiconductor devices fabricated on contaminated surfaces are degraded, with the degree of degradation depending on the nature of the contaminant.Keywords
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