Vapor phase hydrocarbon removal for Si processing
- 12 November 1990
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (20) , 2095-2097
- https://doi.org/10.1063/1.103952
Abstract
Ultraviolet/Oxygen (UV/O2) based vapor phase cleaning of Si(100) surfaces dosed with specific organic molecules has been studied by surface and gas phase analytical techniques. The treatment results in chain scission and carbon volatilization as CO and CO2. At room temperature partial trapping of carbon‐containing species in the oxide is observed, while at elevated temperatures complete hydrocarbon removal occurs. UV/O2‐cleaned samples closely resemble those produced by the standard RCA clean in terms of hydrocarbon removal and oxide formation and this process appears suitable as vapor phase final Si wafer clean.Keywords
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