Dielectric characteristics of fluorinated ultradry SiO2
- 20 March 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (12) , 1127-1129
- https://doi.org/10.1063/1.101479
Abstract
Improvement of dielectric breakdown characteristics and hot‐electron‐induced interface degradation of metal‐oxide‐semiconductor capacitors having fluorinated ultradry oxides has been demonstrated. The fluorine is introduced through HF surface treatment of Si prior to oxidation. Secondary‐ion mass spectrometry data indicate that SiF distribution is peaked both at the surface of the oxide and at the SiO2/Si interface in the fluorinated ultradry oxide. The possible role of fluorine on the improvement of the dielectric characteristics will be discussed.Keywords
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