Reliability of MOSFETs as affected by the interface trap transformation process
- 1 December 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 10 (12) , 537-539
- https://doi.org/10.1109/55.43132
Abstract
An investigation of the long-term time-dependent degradation of the subthreshold characteristics in n-channel and p-channel MOSFETs resulting from Fowler-Nordheim electron injection is discussed. Immediately after the hot-electron injection, degradation in both n- and p-channel transistors due to the hot-electron-induced interface traps is observed. When measured after the hot-electron injection was terminated, however, the subthreshold slope in n-channel transistors exhibits a gradual recovery toward its preinjection level, while that in p-channel transistors continues to degrade with time. This phenomenon can be explained by the interface trap transformation process, which is characterized by a gradual reduction of the hot-electron-induced interface traps above midgap and a gradual increase of the interface traps below midgap.Keywords
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