Optical absorption and refraction spectra in highly excited GaSb
- 1 January 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 30 (12) , 2771-2777
- https://doi.org/10.1109/3.362734
Abstract
A theoretical estimate of carrier-induced changes in absorption and refraction spectra in GaSb is presented. The partly phenomenological electron-hole plasma model including band filling, band-gap renormalization, screening of the Coulomb interaction and the free-carrier plasma effect is used. A dominant contribution of the band filling and screening of the continuum-state Coulomb enhancement is observed. For the first time the influence of high lying conduction band valleys is taken into account. In addition, the model is applied to calculate the absorption and refraction spectra in doped material. The obtained results may prove to be useful in the design of GaSb optoelectronic devicesKeywords
This publication has 25 references indexed in Scilit:
- Influence of Side Conduction Band Valleys on the Band Gap Renormalization in SemiconductorsEurophysics Letters, 1992
- Temperature-dependent exciton linewidths in semiconductorsPhysical Review B, 1990
- Optical properties of GaSb/Ga0.69Al0.31Sb single quantum wells grown by molecular beam epitaxyThin Solid Films, 1990
- Optical dispersion relations for GaP, GaAs, GaSb, InP, InAs, InSb, AlxGa1−xAs, and In1−xGaxAsyP1−yJournal of Applied Physics, 1989
- Photoluminescence study of gallium antimonide grown by liquid-phase epitaxyJournal of Applied Physics, 1989
- Analysis of the quantum-confined Stark effect in GaSb/AlGaSb multiple quantum wellsApplied Physics Letters, 1988
- Nonlinear Optics and the Mott Transition in SemiconductorsPhysica Status Solidi (b), 1988
- Electron transport and conduction band structure of GaSbCanadian Journal of Physics, 1981
- Concentration dependence of the absorption coefficient for n− and p−type GaAs between 1.3 and 1.6 eVJournal of Applied Physics, 1975
- Stress-Modulated Magnetoreflectivity of Gallium Antimonide and Gallium ArsenidePhysical Review B, 1972