Stress-Modulated Magnetoreflectivity of Gallium Antimonide and Gallium Arsenide

We have employed the differential technique for stress modulation in an extensive study of low-temperature (30 K), interband magnetoreflectivity at the fundamental edge of GaSb and of GaAs. The data for GaSb were compared to the coupled-band theory of Pidgeon and Brown by means of an iterative "parameter-optimization" computer program. The following self-consistent set of band parameters was determined: $\left(\frac{m_c}{m}\right)=0.042\mathrm{}\pm 0.001$; $\left(\frac{m_{1\mathrm{h}}}{m}\right)=0.042\mathrm{}\pm 0.002$; ${\left(\frac{m_{\mathrm{hh}}}{m}\right)}_{100}=0.29\mathrm{}\pm 0.09$; ${\left(\frac{m_{\mathrm{hh}}}{m}\right)}_{110}=0.36\mathrm{}\pm 0.13$; ${\left(\frac{m_{\mathrm{hh}}}{m}\right)}_{111}=0.40\mathrm{}\pm 0.16$; ${\gamma }_1^L=13.3\mathrm{}\pm 0.4$; ${\gamma }_3^L=5.7\mathrm{}\pm 0.2$; ${\gamma }_3^L-{\gamma }_2^L=1.3\mathrm{}\pm 0.2$; ${\kappa }^L=3.5\mathrm{}\pm 0.6$; $g_c=-7.8\mathrm{}\pm 0.8$; $E_p=(25\mathrm{}\pm 2)$ eV; and $F=-(1.5\mathrm{}\pm 0.5)\frac{{\hslash }^2}{m}$. Here $m$ is the free-electron mass, $m_c$ is the conduction-band effective mass, $m_{1\mathrm{h}}$ and $m_{\mathrm{hh}}$ are the light-hole and heavy-hole valence-band effective masses, ${\gamma }_1^L$, ${\gamma }_2^L$, ${\gamma }_3^L$, and ${\kappa }^L$ are the Luttinger valence-band parameters, $g_c$ is the conduction-band effective $g$ factor, $E_p$ is the interaction energy introduced by Kane, and $F$ represents the interaction of the conduction band with higher-lying bands.