Boron-doped dependent sites of iodine in silicon
- 1 May 1983
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research
- Vol. 209-210, 375-379
- https://doi.org/10.1016/0167-5087(83)90826-8
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Anisotropic recoilless fraction and temperature dependent quadrupole interaction of substitutional 129I in Si due to Jahn-Teller distortionPhysics Letters A, 1981
- Computer simulation of axial channeling in monatomic and diatomic crystals. Multistring model and its application to foreign-atom locationPhysical Review B, 1978
- Channeling and related effects in the motion of charged particles through crystalsReviews of Modern Physics, 1974