Anisotropic recoilless fraction and temperature dependent quadrupole interaction of substitutional 129I in Si due to Jahn-Teller distortion
- 30 March 1981
- journal article
- Published by Elsevier in Physics Letters A
- Vol. 82 (5) , 255-258
- https://doi.org/10.1016/0375-9601(81)90201-2
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Radiation defects in ion-implanted silicon. I. Mössbauer spectroscopy ofdefect structures from implantations of radioactive antimonyPhysical Review B, 1980
- MÖSSBAUER AND CHANNELING EXPERIMENTS ON [MATH]Si AND [MATH]SiLe Journal de Physique Colloques, 1980
- Laser and thermal annealing of Te-implanted siliconPhysics Letters A, 1979
- On the isomer shifts of129I impurities implanted in semiconductorsHyperfine Interactions, 1977
- Unusual Dynamical Properties of Self-Interstitials Trapped at Co Impurities in AlPhysical Review Letters, 1976
- Mössbauer Studies of ImplantedIons in Semiconductors and Alkali HalidesPhysical Review B, 1973
- Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Arsenic- and Antimony-Vacancy PairsPhysical Review B, 1968
- Deep impurities in siliconMaterials Science and Engineering, 1967
- Mössbauer Spectrum ofin MgOPhysical Review B, 1967