Laser and thermal annealing of Te-implanted silicon
- 1 October 1979
- journal article
- Published by Elsevier in Physics Letters A
- Vol. 73 (4) , 356-358
- https://doi.org/10.1016/0375-9601(79)90558-9
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Laser-beam annealing of heavily damaged implanted layers on siliconApplied Physics Letters, 1978
- A comparative study of laser and thermal annealing of boron-implanted siliconJournal of Applied Physics, 1978
- Lattice location of Te in laser-annealed Te-implanted siliconJournal of Applied Physics, 1978
- On the isomer shifts of129I impurities implanted in semiconductorsHyperfine Interactions, 1977
- Mössbauer Studies of ImplantedIons in Semiconductors and Alkali HalidesPhysical Review B, 1973
- Lattice location and dopant behavior of group II and VI elements implanted in siliconSolid State Communications, 1970