Electron trap states and low frequency noise in tunnel junctions
- 1 March 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Magnetics
- Vol. 23 (2) , 1658-1661
- https://doi.org/10.1109/tmag.1987.1064840
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Noise and hysteresis in flux-locked TlBaCaCuO SQUIDsApplied Physics Letters, 1989
- Low-frequency noise and discrete charge trapping in small-area tunnel junction dc SQUID’sApplied Physics Letters, 1986
- Nature of Single-Localized-Electron States Derived from Tunneling MeasurementsPhysical Review Letters, 1985
- Discrete lorentzian structure in low frequency voltage noise spectra of very small area Josephson tunnel junctionsIEEE Transactions on Magnetics, 1985
- Ion implantation into Nb/Nb oxide/PbAuIn Josephson tunnel junctionsApplied Physics Letters, 1984
- Composition ofNoise in Metal-Insulator-Metal Tunnel JunctionsPhysical Review Letters, 1984
- Nb/Nb oxide/Pb-alloy Josephson tunnel junctionsIEEE Transactions on Magnetics, 1981
- High-quality submicron niobium tunnel junctions with reactive-ion-beam oxidationApplied Physics Letters, 1980
- Energy Scales for Noise Processes in MetalsPhysical Review Letters, 1979
- Noise in Semiconductors: Spectrum of a Two-Parameter Random SignalJournal of Applied Physics, 1954