High-quality submicron niobium tunnel junctions with reactive-ion-beam oxidation
- 1 November 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (9) , 841-843
- https://doi.org/10.1063/1.92067
Abstract
A new reactive‐ion‐beam oxidation technique has been applied to the fabrication of rugged, high‐quality niobium‐lead alloy Josephson tunnel junctions. Control of critical current density over a wide range is possible, and critical current densities exceeding 106 A/cm2 have been obtained. In addition, a process‐compatible edge geometry has been developed which allows a junction to be formed on the faceted edge of a niobium base electrode, yielding devices with areas of 10−9 cm2 using 1‐μm photolithography.Keywords
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