Improving the radiation hardness properties of silicon detectors using oxygenated n-type and p-type silicon
- 1 June 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 47 (3) , 527-532
- https://doi.org/10.1109/23.856475
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
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