Application of epitaxial graded-gap semiconductor layers as broad range photodetectors
- 1 May 1978
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 50, 269-272
- https://doi.org/10.1016/0040-6090(78)90112-8
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- PEM-effect in graded-gap semiconductorSolid State Communications, 1978
- Electrical and photoelectric properties of graded-gap epitaxial CdxHg1−xTe layersThin Solid Films, 1977
- Conductivity and Hall Coefficient of Graded-Composition Epitaxial CdxHg1−xTe LayersPhysica Status Solidi (a), 1975
- Photovoltaic effects in graded bandgap structuresIEEE Transactions on Electron Devices, 1971
- Growth and Properties of Hg1−xCdxTe Epitaxial LayersJournal of Applied Physics, 1969
- Transport of photocarriers in CdxHg1−xTe graded-gap structuresSolid-State Electronics, 1968
- CdTe–HgTe HeterostructuresJournal of Applied Physics, 1968
- Croissance épitaxique de composés semiconducteurs par évaporation-diffusion en régime isothermeRevue de Physique Appliquée, 1966