Upconversion luminescence of Er-doped ZnF ₂ channel waveguides grown by MBE

21 January 1993

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 29 (2) , 172-173
https://doi.org/10.1049/el:19930116

Abstract

Planar waveguides of erbium doped ZnF₂ on MgF₂ substrates have been grown using molecular beam epitaxy and channel waveguides have been formed by ion milling. By exciting individual channels with an 800 nm pump, strong upconversion fluorescence has been generated at 410, 550 and 670 nm and at numerous weaker peaks. The fabrication technique can be adapted to semiconductor substrates for making compact diode-pumped visible and infra-red lasers.

Keywords

FABRICATION TECHNIQUE
ION MILLING
ER-DOPED ZNF2 CHANNEL WAVEGUIDES
PLANAR WAVEGUIDES
ZNF2:ER-MGF2
MOLECULAR BEAM EPITAXY
800 NM
NONLINEAR OPTICS
MGF2 SUBSTRATE
MBE
410 TO 670 NM
UPCONVERSION FLUORESCENCE

This publication has 1 reference indexed in Scilit:

X-Ray Double Crystal Diffraction Characterization of Epitaxial Magnetic Transiton Metal Difluorides
MRS Proceedings, 1990

Upconversion luminescence of Er-doped ZnF 2 channel waveguides grown by MBE

Abstract

Keywords

Upconversion luminescence of Er-doped ZnF ₂ channel waveguides grown by MBE