Measurement and modeling of the annealing kinetics of stress induced leakage current in ultra-thin oxides
- 1 February 1999
- journal article
- Published by Elsevier in Microelectronics Reliability
- Vol. 39 (2) , 203-207
- https://doi.org/10.1016/s0026-2714(98)00223-6
Abstract
No abstract availableKeywords
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