Nanometer-structure writing on Si(100) surfaces using a non-contact-mode atomic force microscope

Abstract
Nanometer structures were written on Si(100) surfaces by use of a non-contact-mode atomic force microscope. The silicon oxide was formed beneath the tip by applying a negative bias voltage between a p+ silicon tip and the samples. The writing resolution was mainly determined by the local chemical reactions induced by the tip and a minimum line width of about 10 nm was obtained, which is close to that achieved by scanning tunneling microscope and contact-mode atomic force microscope writing.