Fabrication of GaAs nanostructures with a scanning tunneling microscope
- 20 December 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (25) , 3488-3490
- https://doi.org/10.1063/1.110129
Abstract
A method for fabricating GaAs nanostructures with a scanning tunneling microscope (STM) is presented. Utilizing a previously developed Si STM fabrication technique, the STM is used to pattern a thin (5 nm) epitaxial Si layer which is grown on GaAs. The patterned Si layer is used as a mask for wet etching the GaAs. This fabrication technique is quite general and should extend to other material systems provided a surface epitaxial Si layer can be grown.Keywords
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