Morphology and microstructure of epitaxial Cu(001) films grown by primary ion deposition on Si and Ge substrates

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Abstract
A low‐energy, high‐brightness, broad beam Cu ion source is used to study the effects of self‐ion energy Ei on the deposition of epitaxial Cu films in ultrahigh vacuum. Atomically flat Ge(001) and Si(001) substrates are verified by in situ scanning tunneling microscopy (STM) prior to deposition of 300 nm Cu films with Ei ranging from 20 to 100 eV. Film microstructure, texture, and morphology are characterized using x‐ray diffraction ω‐rocking curves, pole figure analyses, and STM. Primary ion deposition produces significant improvements in both the surface morphology and mosaic spread of the films: At Ei>37 eV the surface roughness decreases by nearly a factor of 2 relative to evaporated Cu films, and at Ei≂35 eV the mosaic spread of <named-content...