Effect of an energy-dependent capture cross section on the multiple-trapping model of dispersive transport

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Abstract
The multiple-trapping model has been applied to a variety of time-dependent phenomena in amorphous semiconductors. Previous analyses of this model have assumed trapping in an exponential density of states with a constant capture cross section. Recent measurements of isothermal capacitance transient spectroscopy (ICTS), however, have been interpreted to give an exponentially varying capture cross section. The effects of such a variation on the dispersion parameter are calculated, and it is shown that the conclusions from published ICTS and time-of-flight experiments are in disagreement.