Experimental tests of localization in semiconductors
- 31 March 1983
- journal article
- Published by Elsevier in Physica B+C
- Vol. 117-118, 81-83
- https://doi.org/10.1016/0378-4363(83)90447-3
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Stress Tuning of the Metal-Insulator Transition at Millikelvin TemperaturesPhysical Review Letters, 1982
- Evidence for localization effects in compensated semiconductorsPhysical Review B, 1982
- Comparison of the specific heat and conductivity of Si: PPhysical Review B, 1981
- Scaling theory of the metal-insulator transition in amorphous materialsPhysical Review B, 1981
- Metallic Conductivity near the Metal-Insulator TransitionPhysical Review Letters, 1981
- Sharp Metal-Insulator Transition in a Random SolidPhysical Review Letters, 1980
- Observation of the Approach to a Polarization CatastrophePhysical Review Letters, 1980
- Possible Role of Incipient Anderson Localization in the Resistivities of Highly Disordered MetalsPhysical Review Letters, 1980
- Scaling Theory of Localization: Absence of Quantum Diffusion in Two DimensionsPhysical Review Letters, 1979
- Conduction in non-crystalline systems IX. the minimum metallic conductivityPhilosophical Magazine, 1972