Characterisation of Ion Implanted and Thin Epitaxial Layer Structures Using Photoluminescence

This publication has 3 references indexed in Scilit:

• Heavily doped silicon studied by luminescence and selective absorption
  Solid-State Electronics, 1985
• Photoluminescence from rapid thermal annealed and pulsed-laser-annealed, ion-implanted Si
  Applied Physics Letters, 1984
• Auger coefficients for highly doped and highly excited silicon
  Applied Physics Letters, 1977