Photoluminescence from rapid thermal annealed and pulsed-laser-annealed, ion-implanted Si
- 1 July 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (1) , 47-49
- https://doi.org/10.1063/1.95000
Abstract
Low-temperature photoluminescence studies of ion-implanted and rapid thermal annealed or pulsed-laser-annealed Si are reported. The samples were implanted with As, P, Sb, or B. The luminescence spectra of the pulsed-laser-annealed samples show strong sharp luminescence lines from radiation induced defects, whereas in samples implanted with As, P, or B and rapidly annealed with an arc lamp a very clean spectrum without any defect luminescence is observed. This indicates a very low defect concentration in the lamp annealed material. In Sb-implanted lamp-annealed samples, however, a broad defect luminescence band appears as the temperature is raised and which varies in shape as a function of the annealing temperature. This band is probably due to Sb agglomerates.Keywords
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