Impact of low carbon concentrations on the electrical properties of highly boron doped SiGe layers
- 15 September 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (11) , 1522-1524
- https://doi.org/10.1063/1.119955
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Substitutional versus interstitial carbon incorporation during pseudomorphic growth of Si1−yCy on Si(001)Journal of Applied Physics, 1996
- Strain relaxation in tensile-strained layers on Si(001)Semiconductor Science and Technology, 1996
- Calculation of the fractional interstitial component of boron diffusion and segregation coefficient of boron in Si0.8Ge0.2Applied Physics Letters, 1996
- The effect of carbon on diffusion in siliconMaterials Science and Engineering B, 1996
- Investigation of the high temperature behavior of strained Si1−yCy /Si heterostructuresJournal of Applied Physics, 1995
- Carbon precipitation in silicon: Why is it so difficult?Applied Physics Letters, 1993
- Carbon defects and defect reactions in siliconPhysical Review Letters, 1990
- Point defects and dopant diffusion in siliconReviews of Modern Physics, 1989
- Interstitial Defect Reactions in SiliconMaterials Science Forum, 1989
- Influence of Oxygen and Boron on Defect Production in Irradiated SiliconMRS Proceedings, 1987