Investigation of the high temperature behavior of strained Si1−yCy /Si heterostructures
- 1 March 1995
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 77 (5) , 1934-1937
- https://doi.org/10.1063/1.358826
Abstract
We report on x‐ray diffraction measurements of the substitutional carbon content y in pseudomorphic Si1−yCy (yin situ by an x‐ray powder diffractometer. Despite the tensile strain in the 100‐nm‐thick layers and the high carbon supersaturation, the samples were stable up to 800 °C. Beyond this temperature range, the substitutional carbon content decreased exponentially during isothermal annealing. This effect can be explained by the precipitation of the carbon and the nucleation and diffusion limited growth of SiC nanocrystals. Since no strain relief by the introduction of misfit dislocations was detectible, we conclude that contrary to the mechanism of strain relief in Si1−xGex, in comparably strained Si1−yCy epilayers, the main high temperature process is precipitation.This publication has 14 references indexed in Scilit:
- X-ray in situ observation of relaxation and diffusion processes in Si1−xGex layers on silicon substratesJournal of Applied Physics, 1994
- In situ monitoring of strain relaxation during antimony-mediated growth of Ge and Ge1−y Cy layers on Si(001) using reflection high energy electron diffractionApplied Physics Letters, 1994
- Growth of an inverse tetragonal distorted SiGe layer on Si(001) by adding small amounts of carbonApplied Physics Letters, 1994
- Lattice distortion in a strain-compensated layer on siliconPhysical Review B, 1994
- A fast X-ray method to determine Ge content and relaxation of partly relaxed Si1–xGex layers on silicon substratesPhysica Status Solidi (a), 1994
- In-situ X-ray measurements of relaxation processes in Si1-xGex layers on si substratePhysica Status Solidi (a), 1993
- Stability of strained Si1−yCy random alloy layersJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993
- The absolute “lattice parameter” of crystals with defects measured with X-ray methodsPhysica Status Solidi (b), 1986
- Defects associated with the accommodation of misfit between crystalsJournal of Vacuum Science and Technology, 1975
- Effect of Carbon on the Lattice Parameter of SiliconJournal of Applied Physics, 1968