Low-threshold high-quantum-efficiency laterally gain-coupled InGaAs/AlGaAs distributed feedback lasers
- 25 January 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (4) , 483-485
- https://doi.org/10.1063/1.123164
Abstract
We have developed gain-coupled lasers based on metal gratings patterned laterally to the laser ridge. For narrow ridge waveguides, the evanescent field of the laser mode couples to the grating. The fabrication requires no overgrowth steps and can be applied to all material systems. Ridge-waveguide gain-coupled lasers with threshold current densities of 600 A/cm2 were obtained from InGaAs/AlGaAs GRINSCH structures. The continuous wave threshold currents are around 9 mA for a cavity with 600 μm length and 2.5 μm width. Monomode emission up to output power levels of 64 mW and sidemode suppression ratios of over 45 dB have been obtained.Keywords
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