Study of growth conditions of silicon carbide epitaxial layers
- 1 March 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 87 (4) , 519-522
- https://doi.org/10.1016/0022-0248(88)90099-1
Abstract
No abstract availableThis publication has 1 reference indexed in Scilit:
- Chemical Etching of Silicon Carbide with HydrogenJournal of the Electrochemical Society, 1965