Nonlinear excitonic optical absorption in GaSb
- 10 August 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (6) , 430-432
- https://doi.org/10.1063/1.98412
Abstract
We have measured the saturation of optical absorption in GaSb at wavelengths close to the band gap, and have determined the nonlinear absorption (α2) and refraction (n2) coefficients. At liquid‐helium temperature a sharp free‐exciton absorption line is observed which saturates with increasing incident laser intensity; we obtain values ‖α2‖=70 cm W−1 and ‖n2‖≊0.2 cm2 kW−1. At room temperature we do not observe a well‐defined exciton; saturation of the residual interband absorption occurs at much higher intensity, and it is found to be obscured by strong thermal effects.Keywords
This publication has 12 references indexed in Scilit:
- Nonlinear excitonic optical absorption in GaInAs/InP quantum wellsApplied Physics Letters, 1987
- Nonlinear optical absorption in bulk GaInAs/InP at room temperatureApplied Physics Letters, 1987
- Nonlinear spectroscopy of InGaAs/InAlAs multiple quantum well structuresApplied Physics Letters, 1986
- Efficient cw performance of a Co:MgF2 laser operating at 1.5–2.0 μmOptics Communications, 1986
- Room Temperature Operation of Al0.17Ga0.83Sb/GaSb Multi-Quantum Well Lasers Grown by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1984
- Preparation of 1.78-μm wavelength Al0.2Ga0.8Sb/GaSb double-heterostructure lasers by molecular beam epitaxyApplied Physics Letters, 1983
- Modulation-spectroscopy study of theband structurePhysical Review B, 1983
- Saturation of the free exciton resonance in GaAsSolid State Communications, 1979
- Band-To-Band Optical Pumping in Solids and Polarized PhotoluminescencePhysical Review Letters, 1969
- Impurity and Exciton Effects on the Infrared Absorption Edges of III-V CompoundsPhysical Review B, 1965