Analysis of process-induced charges created in MOSFETs and related collection test structures
- 4 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Analysis of the charge pumping technique and its application for the evaluation of MOSFET degradationIEEE Transactions on Electron Devices, 1989
- A reliable approach to charge-pumping measurements in MOS transistorsIEEE Transactions on Electron Devices, 1984