Incorporation of boron during the growth of GaAs single crystals
- 15 June 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (12) , 989-990
- https://doi.org/10.1063/1.91393
Abstract
A study of GaAs prepared by conventional Bridgman techniques and by liquid‐encapsulated Czochralski methods reveals that only small amounts of boron are incorporated from the boric oxide encapsulant. When a pyrolytic boron nitride crucible is used, there is a 100‐fold increase in the amount of incorporated boron, suggesting some decomposition of the boron nitride.Keywords
This publication has 6 references indexed in Scilit:
- Chromium concentrations, depth distributions, and diffusion coefficient in bulk and epitaxial GaAs and in SiApplied Physics Letters, 1980
- Implantation of shallow impurities in Cr-doped semi-insulating GaAsApplied Physics Letters, 1979
- Alloying of Au layers and redistribution of Cr in GaAsApplied Physics Letters, 1979
- Redistribution of Cr during annealing of 80Se-implanted GaAsApplied Physics Letters, 1979
- Chromium profiles in semi-insulating GaAs after annealing with a Si3N4 encapsulantApplied Physics Letters, 1979
- Investigation of compensation in implanted n-GaAsJournal of Applied Physics, 1978