Alloying of Au layers and redistribution of Cr in GaAs
- 15 October 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (8) , 615-617
- https://doi.org/10.1063/1.91227
Abstract
Alloying of Au films on Cr‐doped GaAs substrates and Sn‐doped LPE layers grown on semi‐insulating substrates has been investigated by TEM and SIMS profiling. Annealing at 350 °C for variable periods was found to produce rapid outdiffusion of Cr into regions of near‐surface damage induced by strain effects at the interface and subsequent diffusion of Au into the GaAs.Keywords
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