Role of interfacial thermal resistance and laser energy density during laser processing of copper-sapphire couples

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Abstract
The effect of the interfacial thermal resistance and the laser energy density on film morphology and the extent of evaporation was studied in the excimer laser processing of copper-sapphire couples. Copper films of 80 nm thickness were sputter-deposited on sapphire substrates and laser-irradiated with energy densities in the range of 0.2 to 3.5 J/cm2. The changes in film morphology and thickness as a function of laser energy density were analyzed by energy dispersive x-ray spectroscopy. Four regimes can be established as a function of the laser energy density. First, for low energy densities up to a critical value, the film is partially removed by thermal stresses. Second, as the energy density is increased above that critical value, larger portions of the film remain attached to the substrate. In this regime adhesion enhancement takes place. Third, a further increase in the energy density results in film evaporation. Finally, the decrease in the specific mass removal rate of copper is related to the formation of a laser generated plasma that shields the sample from the incoming radiation. In this last regime, an intermediate compound may form at the substrate surface. The data were correlated with results from a computer model of the heat flow during laser processing of metal-ceramic couples.