Work function of WSi2
- 1 February 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 1 (2) , 18-19
- https://doi.org/10.1109/edl.1980.25213
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Properties of Sputtered Tungsten Silicide for MOS Integrated Circuit ApplicationsJournal of the Electrochemical Society, 1980
- 1 µm MOSFET VLSI technology: Part VII—Metal silicide interconnection technology—A future perspectiveIEEE Transactions on Electron Devices, 1979
- The role of the metal-semiconductor interface in silicon integrated circuit technologyJournal of Vacuum Science and Technology, 1974
- Barrier energies in metal-silicon dioxide-silicon structuresJournal of Physics and Chemistry of Solids, 1966