Surface-energy-driven grain growth during rapid thermal annealing (<10 s) of thin silicon films
- 15 February 1987
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 61 (4) , 1652-1655
- https://doi.org/10.1063/1.338055
Abstract
Surface-energy-driven grain growth in 70-nm-thick phosphorus-doped Si films is reported for anneals of less than 10 s over a temperature range of ∼1100 to 1225 °C. Secondary grains grow to sizes of 1 μm or larger and have (111) crystallographic texture, indicating surface energy minimization. A kinetic analysis of grain growth suggests that while the rate of grain boundary motion is limited by P diffusion, the initial growth rate can be high, 72 nm/s at 1100 °C.This publication has 5 references indexed in Scilit:
- Compensation of grain growth enhancement in doped silicon filmsApplied Physics Letters, 1986
- Secondary grain growth in thin films of semiconductors: Theoretical aspectsJournal of Applied Physics, 1985
- Surface-energy-driven secondary grain growth in ultrathin (<100 nm) films of siliconApplied Physics Letters, 1984
- Phosphorus Isoconcentration Diffusion Studies in SiliconJournal of the Electrochemical Society, 1973
- The effect of thermal grooving on grain boundary motionActa Metallurgica, 1958